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KF6N70F

KEC
Part Number KF6N70F
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 23, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF6N70F PDF File

KF6N70F
KF6N70F

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=700V, ID=6A Drain-Source ON Resistance : RDS(ON)(Max)=1.
65 @VGS=10V Qg(typ.
)= 19nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 700 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 6* 4* 15* 160 4.
2 4.
5 41 0.
33 Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 3.
05 62.
5 * : Drain current limited by maximum junction temperature.
UNIT V V A mJ mJ V/ns W W/ /W /W Q KF6N70F N CHANNEL MOS FIELD EFFECT TRANSISTOR AC F O K E LM D NN 123 G B J R H 1.
GATE 2.
DRAIN 3.
SOURCE DIM MILLIMETERS A 10.
16 +_ 0.
2 B 15.
87 +_ 0.
2 C 2.
54 +_ 0.
2 D 0.
8 +_ 0.
1 E 3.
18 +_ 0.
1 F 3.
3 +_ 0.
1 G 12.
57 +_ 0.
2 H 0.
5 +_ 0.
1 J 13.
0 +_ 0.
5 K 3.
23 +_ 0.
1 L 1.
47 MAX M 1.
47 MAX N 2.
54 +_ 0.
2 O 6.
68 +_ 0.
2 Q 4.
7 +_ 0.
2 R 2.
76 +_ 0.
2 *Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G 2013.
7.
12 S Revision No : 0 1/6 KF6N70F ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=700V, VGS=0V Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=3A Total Gate Charge Gate-Source Charge Gate-Drai...


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