Part Number
|
KDV350E |
Manufacturer
|
KEC |
Description
|
Silicon Diode |
Published
|
Mar 25, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package. (ESC Package)
KDV350E
...
|
Datasheet
|
KDV350E
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.
50 (Max.
) Small Package.
(ESC Package)
KDV350E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CE 1
CATHODE MARK B A
GG
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
2 D
1.
ANODE 2.
CATHODE
F
DIM A B C D E F G
MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current
Capacitance
VR IR C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A ...
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