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KDV358

KEC
Part Number KDV358
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small ...
Datasheet PDF File KDV358 PDF File

KDV358
KDV358

Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES Good C-V Linearity.
Low Series Resistance.
: rS=0.
4 Small Package : USC.
(Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V KDV358 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1.
ANODE 2.
CATHODE J C I DIM MILLIMETERS A 2.
50 +_ 0.
1 B 1.
25+_ 0.
05 C 0.
90 +_0.
05 D 0.
30+0.
06/-0.
04 E 1.
70 +_ 0.
05 F MIN 0.
17 G 0.
126 +_ 0.
03 H 0~0.
1 I 1.
0 MAX J 0.
15 +_0.
05 K 0.
4 +_0.
05 L 2 +4/-2 M 4~6 USC Marking Type Name VJ Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance C1V C4V Capacitance Ratio C1V/C4V Series Resistance rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN.
- 19.
5 8.
0 2.
2 - TYP.
- MAX.
10 100 21.
0 9.
3 0.
4 UNIT nA pF - 2008 .
9 11 Revision No : 1 1/2 R...


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