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KDV273E

Part Number KDV273E
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resis...
Datasheet KDV273E





Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.
0(Typ.
) Low Series Resistance : rs=0.
39 (Typ.
) KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 10 150 -55 150 UNIT V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN.
10 15 7.
3 1.
8 - TYP.
16 8.
0 2.
0 0.
39 MAX.
10 17 8.
7 0.
5 UNIT V nA pF 2014.
3.
...






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