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KDV273UL

KEC
Part Number KDV273UL
Manufacturer KEC
Description VARIABLE CAPACITANCE DIODE
Published Oct 15, 2007
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resis...
Datasheet PDF File KDV273UL PDF File

KDV273UL
KDV273UL

Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.
0(Typ.
) Low Series Resistance : rs=0.
39 (Typ.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 10 150 -55 150 UNIT V KDV273UL VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C A B H E G E H D 1.
ANODE 2.
CATHODE DIM MILLIMETERS A 1.
0 +_ 0.
05 B 0.
6 +_ 0.
05 C 0.
36 +0.
02 - 0.
03 D 0.
5 +_ 0.
03 E 0.
25 +_0.
03 G 0.
65+_ 0.
03 H 0.
05 ULP-2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN.
10 15 7.
3 1.
8 - TYP.
16 8.
0 2.
0 0.
39 MAX.
10 17 8.
7 0.
5 UNIT V nA pF Marking Type Name VB 2007.
5.
16 Revision No : 0 1/2 CAPACITANCE CT (pF) REVERSE CURRENT I R (pA) KDV273UL C T - VR 100 f=1MHz Ta=25 C 10 1 0 1 2 3 4 5 6 7 8 9 10 REVERSE VOLTAGE VR (V) 1K Ta=25 C IR - VR 100 10 1 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) 2007.
5.
16 Revision No : 0 2/2 ...


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