Part Number
|
HFW12N60S |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Mar 26, 2016 |
Detailed Description
|
HFW12N60S
Jan 2013
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A
FEATURES
Originati...
|
Datasheet
|
HFW12N60S
|
Overview
HFW12N60S
Jan 2013
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.
53 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
53 ȍ7\S#9GS=10V 100% Avalanche Tested
D2-PAK
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note ...
Similar Datasheet