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HFW12N65S

SemiHow
Part Number HFW12N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Apr 14, 2017
Detailed Description HFW12N65S July 2016 HFW12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 12 A FEATURES ‰ Originat...
Datasheet PDF File HFW12N65S PDF File

HFW12N65S
HFW12N65S

Overview
HFW12N65S July 2016 HFW12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
67 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested D2-PAK D G S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 12 7.
4 48 ρ30 860 12 22.
5 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25୅) * Power Dissipa...


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