HFI6N90

HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.95 ȍ7\S#9GS=10V ‰ 1...