Part Number
|
KDS123E |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Mar 26, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery ...
|
Datasheet
|
KDS123E
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating.
Total Rating=Unit Rating 0.
7
UNIT V V mA mA A mW
A G H
KDS123E
SILICON EPITAXIAL PLANAR DIODE
C
E B
D 2 DIM MILLIMETERS
13
A 1.
60+_ 0.
20 B 0.
85+_ 0.
10
C 0.
70+_ 0.
10
D 0.
...
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