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KDS121V

KEC
Part Number KDS121V
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 26, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Very Small Package : VSM. Low Forward...
Datasheet PDF File KDS121V PDF File

KDS121V
KDS121V

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Very Small Package : VSM.
Low Forward Voltage : VF=0.
9V (Typ.
).
Fast Reverse Recovery Time : trr=1.
6ns(Typ.
).
Small Total Capacitance : CT=0.
9pF (Typ.
).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM IO IFSM PD Tj Storage Temperature Range Tstg Note : * Unit Rating.
Total Rating=Unit Rating x 1.
5 RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW A G H KDS121V SILICON EPITAXIAL PLANAR DIODE K E B 2 13 PP 1.
ANODE 1 2.
ANODE 2 3.
CATHODE JD DIM A B C D E G H J K P MILLIMETERS 1.
2 +_0.
05 0.
8 +_0.
05 0.
5 +_ 0.
05 0.
3 +_ 0.
05 1.
2 +_ 0.
05 0.
8 +_ 0.
05 0.
40 0.
12+_ 0.
05 0.
2 +_ 0.
05 5 3 21 VSM C Marking B3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Ca...


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