Part Number
|
KDS125U |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Mar 26, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : US6. Low forward voltage. ...
|
Datasheet
|
KDS125U
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : US6.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VRM VR IFM* IO* IFSM* PD Tj
85 V 80 V 300 mA 100 mA 2A 200 mW 150
Storage Temperature Range
Tstg -55 150
* This is Maximum Ratings of single diode (D1 or D2 or D3 or D4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single diod...
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