Part Number
|
KDS165T |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Mar 26, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage. Fast Reverse Recovery...
|
Datasheet
|
KDS165T
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total Capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Maximum (Peak) Forward Current
IFM *
300
Average Forward Current
IO * 100
Surge Current (10ms)
IFSM *
2
Power Dissipation
PD **
900
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Unit Rating.
(Total Rating=Unit Rating 1.
5) ** : Total rating, Package mounted on a ceramic board (600 0.
8 )
UNIT V V mA mA A mW
CA F
K D
KDS165T
SILICON EPITAXIAL PLANAR DIODE
E B 14
23
DIM MILLIMETERS ...
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