FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16 2K X 8 EEPROM Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 24-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION The PYA28C16 is a 5 Volt 2Kx8 EEPROM.
The PYA28C16 is a 16K memory organized as 2,048 words by 8 bits.
Data Retention is 10 Years.
The device is available in a 24-Pin 600 mil wide Ceramic DIP a...

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