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PYA28C16B


Part Number PYA28C16B
Manufacturer PYRAMID
Title EEPROM
Description The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PYA28C16B is a 16K memory organized as 2,048 words by 8 bits. Data Retention is 10 Years. The device is...
Features Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16B 2K X 8 EEPROM Endurance: ...

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PYA28C16 : The PYA28C16 is a 5 Volt 2Kx8 EEPROM. The PYA28C16 is a 16K memory organized as 2,048 words by 8 bits. Data Retention is 10 Years. The device is available in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC. PIN CONFIGURATIONS FUNCTIONAL BLOCK DIAGRAM DIP (C12) Document # EEPROM108 REV A LCC (L6) Revised July 2012 PYA28C16 - 2K x 8 EEPROM OPERATION READ Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE or CE is HIGH. BYTE WRITE Write operations are initiated when both.




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