SGA9189Z Medium Power Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe
Transistor
Package: SOT-89
Product Description
RFMD’s SGA9189Z is a high performance
transistor designed for operation to 3GHz.
With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.
5dBm.
This RF device is based on a silicon germanium heterostructure bipolar
transistor (SiGe HBT) process.
The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels.
It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95...