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SGA9189Z

RF Micro Devices
Part Number SGA9189Z
Manufacturer RF Micro Devices
Description Medium Power Discrete SiGe Transistor
Published Apr 1, 2016
Detailed Description SGA9189Z Medium Power Discrete SiGe Transistor SGA9189Z Medium Power Discrete SiGe Transistor Package: SOT-89 Produc...
Datasheet PDF File SGA9189Z PDF File

SGA9189Z
SGA9189Z

Overview
SGA9189Z Medium Power Discrete SiGe Transistor SGA9189Z Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz.
With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.
5dBm.
This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process.
The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels.
It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95...


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