isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
30
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
2SD750
is...