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2SD716


Part Number 2SD716
Manufacturer Toshiba
Title NPN Transistor
Description : SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to 2SB686. • Recommended for 30 ^ 35W High-Fidelity Aud...
Features
• Complementary to 2SB686.
• Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. 15.9MAX. Unit in mm 03.2±O.2 r-Tjr -ppe ES MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Curren...

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2SD711 : 2SD711 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE,HIGH SPEED SWITCHING hFE ASO Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability Outline Drawings TO-3 Applications Motor controls Inverters, choppers Switching regulators General purpose power amplifiers Item Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C ) Symbol VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg Rating 500 500 350 6 15 0.5 100 +150 -55 to +150 Unit V V V V A A W °C °C JEDEC EIAJ TO-3 TC-3, TB-3 Equivalent Circuit Schematic Item Item Electrical characteristics (Tc =25°C unless otherwise specified) Symbol.

2SD711 : ·High DC Current Gain ·Low Collector Saturation Voltage ·Excellent Safe Operating Area ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor controls ·Inverters,choppers ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAM.

2SD715 : ·High DC Current Gain : hFE= 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous 110 V 110 V 5 V 7 A ICM Collector Current-Peak PC ollector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Tempe.

2SD716 : ·With TO-3P(I) package ·Complement to type 2SB686 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 6 -6 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specificatio.

2SD716 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A ·Complement to Type 2SB686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W .

2SD717 : SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm 1&9MAX. 0&2±o.2 DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. -A.'^ -A. eH _u FEATURES • Low Collector Saturation Voltage : VCE (sat)=0.4V (Max.), (I C=6A) • High Collector Power Dissipation : P C=80W (Tc=25°C) 5.45±Q2 545±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector pation Power Dissi-/(T.T, c-ozqd°rC-)\ Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB PC T.i T st S RATING 70 50 5 10 2 80 150 -55^150 UNIT V V V A A W °C °C x' + 1 03 00 if— aal.fuLu it.

2SD717 : ·With TO-3P(I) package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 70 50 5 10 2 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Produ.

2SD717 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation : PC= 80W @TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 80 W .

2SD718 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-003.C .

2SD718 : ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 0.8 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN P.

2SD718 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB688 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 80 W 150 ℃ Tstg Storage Temperature Range .

2SD718 : : 2SD718 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SB688. . Recommended for 45— 50W audio frequency amplifier output stage. Unit in mm 5.9MAX. .03.2x0.2 S8 - ON itnu MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO v EBO ic IB RATING 120 120 0.8 80 stg_ : 150 -55~ 150 UNIT +0.30 1.0— Q2 54- dc5 +1 00 00 1. BASE 2. COLLECTOR CHEAT SINK) 3. EMITTER TOSHIBA 2-16B1A Weight : 4.6g ELECTRICAL CHARACTERISTICS (Ta=25°C) CH.




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