Part Number
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DMN2011UFX |
Manufacturer
|
Diodes |
Description
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Dual N-Channel MOSFET |
Published
|
Apr 8, 2016 |
Detailed Description
|
ADVANCED INFORMATION
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V
ID max TA = +25°C...
|
Datasheet
|
DMN2011UFX
|
Overview
ADVANCED INFORMATION
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.
5mΩ @ VGS = 4.
5V 13mΩ @ VGS = 2.
5V
ID max TA = +25°C
12.
2 A 10.
4 A
DMN2011UFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
G...
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