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DMN2011UTS

DIODES
Part Number DMN2011UTS
Manufacturer DIODES
Description N-CHANNEL MOSFET
Published May 9, 2023
Detailed Description DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5...
Datasheet PDF File DMN2011UTS PDF File

DMN2011UTS
DMN2011UTS

Overview
DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.
5V 13mΩ @ VGS = 2.
5V ID Max TC = +25°C 21A 20A Features and Benefits  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
 Battery Management Application  Power Management Functions  DC-DC Converters...


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