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V8P12

Part Number V8P12
Manufacturer Vishay
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Published Apr 10, 2016
Detailed Description www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Recti...
Datasheet V8P12




Overview
www.
vishay.
com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
53 V at IF = 4 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.
1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRIMARY CHARACTERISTICS IF(A...






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