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V8P10

Vishay
Part Number V8P10
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Apr 10, 2016
Detailed Description www.vishay.com V8P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottk...
Datasheet PDF File V8P10 PDF File

V8P10
V8P10

Overview
www.
vishay.
com V8P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
466 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.
1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
PRIMARY CHARACTERISTICS IF(AV) 8.
0 A VRRM IFSM 100 V 150 A EAS 100 mJ VF at IF = 8 A 0.
582 V TJ max.
Package 150 °C SMPC (TO-277A) Diode variations Single MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified  (“_X” denotes revision code e.
g.
A, B,) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig.
1) Peak forward surge current 10 ms single half sine-wave  superimposed on rated load IF(AV) IFSM Non-repetitive avalanche energy at IAS = 2.
0 A, TJ = 25 °C EAS Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM Operating junction and storage temperature range TJ, TSTG V8P10 V810 100 8.
0 150 100 1.
0 -40 to +15...


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