MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Axial Lead Rectifiers
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employing the
Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.
1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant ...