FMMT634Q

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO 100V  IC = 900mA high Continuous Collector Current  ICM = 5A Peak Pulse Current  625mW Power dissipation  hFE 5k up to 2A for high current gain hold up  Complementary PNP Type: FMMT734Q  Totally Lead-F...