DatasheetsPDF.com

FMMT634

Zetex Semiconductors
Part Number FMMT634
Manufacturer Zetex Semiconductors
Description NPN SILICON POWER DARLINGTON TRANSISTOR
Published Apr 1, 2005
Detailed Description “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest...
Datasheet PDF File FMMT634 PDF File

FMMT634
FMMT634

Overview
“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734 PARTMARKING DETAIL – 634 FMMT634 E C B SOT23 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 120 100 12 5 900 625 -55 to +150 UNIT V V V A mA mW °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.
6mm.
**Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2%.
FMMT634 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 0.
67 0.
72 0.
75 0.
82 0.
68 0.
85 1.
5 MIN.
120 TYP.
170 MAX.
UNIT V CONDITIONS.
I C=100 µ A I C=10mA* I E=100 µ A V CB=80V V EB=7V V CES=80V I C=100mA, I B=1mA I C=250mA, I B=1mA I C=500mA, I B=5mA I C=900mA, I B=5mA I C=900mA, I B=5mA I C=1A, I B=5mA * I C=1A, I B=5mA * I C =1A, V CE=5V* I C=10mA, V CE=5V * I C=100mA, V CE=5V * I C=1A, V CE=5V * I C=2A, V CE=5V * I C=5A, V CE=5V * I C=1A, V CE=2V * MHz I C=50mA, V CE=10V f=100MHz V CB=10V, f=1MHz I C=500mA V CC=20V I B= ± 1mA * * * * *† 100 115 V 12 16 V 10 nA 10 nA 100 nA 0.
75 0.
80 0.
85 0.
93 — 0.
96 1.
65 V V V V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 20K 15K 5K V 1.
33 1.
5 V 50K 60K 40K 14K 600 24K 140 Transition Frequency Output Capacitanc...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)