re Pro
STU/D35L01
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 2.
1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 35A 24 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperatur...