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STU35L01HA

SamHop Microelectronics
Part Number STU35L01HA
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Apr 16, 2016
Detailed Description Gre Pro STU/D35L01HA Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor V...
Datasheet PDF File STU35L01HA PDF File

STU35L01HA
STU35L01HA

Overview
Gre Pro STU/D35L01HA Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.
0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 35A 20 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 35 29 92 156 60 42 -55 to 175 2.
5 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice.
1 Mar,30,2011 www.
samhop.
com.
tw STU/D35L01HA Ver 1.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS BVDSS Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage e IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VGS=0V , ID=10mA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 V 110 V 1 uA ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr tD(OFF) Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=17A VDS=10V , ID=17A VDS=25V,VGS=0V f=1.
0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=17A,VGS=10V VDS=50V,ID=17A, VGS=10V 2 2.
7 4 V 20 25...


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