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Part Number
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HFP4N90 |
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Manufacturer
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SemiHow |
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Description
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N-Channel MOSFET |
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Published
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Apr 18, 2016 |
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Detailed Description
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HFP4N90
March 2014
HFP4N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 4.0 A
FEATURES
Originative...
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Datasheet
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HFP4N90
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Overview
HFP4N90
March 2014
HFP4N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 4.
0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
...
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