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HFP4N60F

SemiHow
Part Number HFP4N60F
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Jun 27, 2016
Detailed Description HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Techno...
Datasheet PDF File HFP4N60F PDF File

HFP4N60F
HFP4N60F

Overview
HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.
5 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2.
6 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 4 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 600 4.
0 2.
5 16 ρ30 70 4 11 110 0.
88 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
1.
15 -62.
5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡ HFP4N60F Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 2 A 2.
0 -- Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125୅ VGS = ρ30 V, VDS = 0 V 600 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.
0 MHz ---- Switching Characteristics td(on) Turn-On Time tr Turn-On...


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