HFP50N06GC

HFP50N06GC Dec 2014 HFP50N06GC 60V N-Channel MOSFET BVDSS = 60 V RDS(on) typ Pȍ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON...