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HFP50N06

SemiHow
Part Number HFP50N06
Manufacturer SemiHow
Description 60V N-Channel MOSFET
Published Aug 18, 2009
Detailed Description www.DataSheet4U.com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative N...
Datasheet PDF File HFP50N06 PDF File

HFP50N06
HFP50N06

Overview
www.
DataSheet4U.
com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.
) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
018 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 60 50 35.
4 200 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 490 50 12 7.
0 120 0.
8 -55 ...


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