ACE1512E
N-Channel Enhancement Mode Field Effect
Transistor with ESD Protection
Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.
8V to 8V.
It is ESD protected.
Features
• VDS (V)=20V • ID=6.
5A (VGS=4.
5V) • RDS(ON)21mΩ (VGS=4.
5V) • RDS(ON)25mΩ (VGS=2.
5V) • RDS(ON)33mΩ (VGS=1.
8V) • ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC TA=25℃ TA=70℃
Drain Current (Pulsed)*B
Power Dissipation
TA=25℃ TA=70℃
Operating temperature / storage temperature
Symbol Ratings Unit
VDSS 20 V
VGSS ±8 V
6.
5...