DatasheetsPDF.com

ACE1512E

Part Number	ACE1512E
Manufacturer	ACE Technology
Description	N-Channel MOSFET
Published	Apr 18, 2016
Detailed Description	ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced ...
Datasheet	ACE1512E PDF File

Overview

ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.
8V to 8V.
It is ESD protected.
Features • VDS (V)=20V • ID=6.
5A (VGS=4.
5V) • RDS(ON)<21mΩ (VGS=4.
5V) • RDS(ON)<25mΩ (VGS=2.
5V) • RDS(ON)<33mΩ (VGS=1.
8V) • ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.
5 ID A 5.
2 IDM 24 A 1 PD W 0.
64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.
1 1 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE1512EBMS + H Halogen - free Pb - free BMS : TSOT-23-3 Electrical Characteristics TA=25℃, unless ot...

Similar Datasheet

ACE1512E N-Channel MOSFET - ACE Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)