J
BP E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌ1W (Mounted on Ceramic Substrate).
ᴌSmall Flat Package.
ᴌComplementary to KTA1664.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IB PC PC* Tj
35 30 5 800 160 500 1 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTC4376 mounted on ceramic substrate (250mm2x0.
8t)
UNIT V V V mA mA
mW W ᴱ ᴱ
KTC4376
EPITAXIAL PLANAR
NPN TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.
70 MAX 2.
50 +_0.
20 1.
70 MAX
0.
45+0.
15/-0.
10
4.
25 ...