CGH35060F1 / CGH35060P1
60 W, 3.
3-3.
6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.
3-3.
6 GHz WiMAX and BWA linear amplifier applications.
The
transistor is supplied in a ceramic/ metal flange and pill package.
Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).
PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916
Typical Performance Over 3.
3-3.
6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.
3 ...