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CGH35060P1

Cree
Part Number CGH35060P1
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gal...
Datasheet PDF File CGH35060P1 PDF File

CGH35060P1
CGH35060P1

Overview
CGH35060F1 / CGH35060P1 60 W, 3.
3-3.
6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.
3-3.
6 GHz WiMAX and BWA linear amplifier applications.
The transistor is supplied in a ceramic/ metal flange and pill package.
Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).
PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916 Typical Performance Over 3.
3-3.
6GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.
3 ...


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