Elektronische Bauelemente
RoHS Compliant Product
FEATURE
Epitaxial Die Construction
Two internal isolated
NPN/
PNP transistors in one package Power Dissipation
PCM : 0.
2 W (Temp.
= 25˚C) Collector Current
ICM : 0.
1A Collector-base Voltage
V(BR)CBO : 50/-50 V Operating & Storage Junction Temperature
TJ, TSTG : -55˚C~+150˚C
MARKING
C1 B2 E2
7P
BC847PN
NPN -
PNP Silicon Multi-Chip
Transistor
SOT-363
E1 B1 C2
ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C
PARAMETER
SYMBOL
VALUE
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature...