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BC847

STMicroelectronics
Part Number BC847
Manufacturer STMicroelectronics
Description SMALL SIGNAL NPN TRANSISTORS
Published Mar 23, 2005
Detailed Description BC847 SMALL SIGNAL NPN TRANSISTORS Type BC847B s Marking 1F s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE...
Datasheet PDF File BC847 PDF File

BC847
BC847

Overview
BC847 SMALL SIGNAL NPN TRANSISTORS Type BC847B s Marking 1F s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENT IS BC857 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 C Storage Temperature Max.
O perating Junction Temperature o Value 50 50 45 6 0.
1 0.
2 0.
2 0.
2 300 -65 to 150 150 Uni t V V V V A A A A mW o o C C October 1997 1/4 BC847 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.
6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min.
Typ .
Max.
15 5 Un it nA µA V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency Collector Base Capacitance Collector Emitter Capacitance Noise Figure Input Impedance Reverse Voltage Ratio Small Signal Current Gain Output Admittance I C = 10 µ A 50 V I C = 2 mA 45 V I C = 10 µ A 6 V V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE∗ fT C CB C EB NF h i e∗ h re∗ h fe ∗ h oe∗ I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 10 µ A I C = 2 mA IE = 0 IC = 0...


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