Part Number
|
TSM600N25E |
Manufacturer
|
Taiwan Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Apr 23, 2016 |
Detailed Description
|
TSM600N25E
250V N-Channel Power MOSFET
TO-251 (IPAK)
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
Key Pa...
|
Datasheet
|
TSM600N25E
|
Overview
TSM600N25E
250V N-Channel Power MOSFET
TO-251 (IPAK)
TO-252 (DPAK)
Pin Definition: 1.
Gate 2.
Drain 3.
Source
Key Parameter Performance
Parameter
Value
VDS RDS(on)(max)
Qg
250 0.
6 8.
4
Unit
V Ω nC
Features
● 100% avalanche tested ● Improved ESD performance
Ordering Information
Part No.
Package
Packing
TSM600N25ECH C5G TO-251
75pcs / Tube
TSM600N25ECP ROG TO-252 2.
5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and 1000ppm antimony compounds
Absolute Maximum Ratings Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1) Single...
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