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TSM600N25E

Taiwan Semiconductor
Part Number TSM600N25E
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM600N25E 250V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Pa...
Datasheet PDF File TSM600N25E PDF File

TSM600N25E
TSM600N25E

Overview
TSM600N25E 250V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1.
Gate 2.
Drain 3.
Source Key Parameter Performance Parameter Value VDS RDS(on)(max) Qg 250 0.
6 8.
4 Unit V Ω nC Features ● 100% avalanche tested ● Improved ESD performance Ordering Information Part No.
Package Packing TSM600N25ECH C5G TO-251 75pcs / Tube TSM600N25ECP ROG TO-252 2.
5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single...


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