isc Silicon
NPN Power
Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A
·High Power Dissipation ·Complement to Type BD750/750A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD751
100
VCEV
Collector-Emitter Voltage
V
BD751A 130
BD751
90
VCEO(SUS) Collector-Emitter Voltage
V
BD751A 120
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃ 200
W...