Part Number
|
RQK0609CQDQS |
Manufacturer
|
Renesas |
Description
|
N-Channel MOSFET |
Published
|
Apr 28, 2016 |
Detailed Description
|
RQK0609CQDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 78 mΩ typ.(at VGS = 4.5 V...
|
Datasheet
|
RQK0609CQDQS
|
Overview
RQK0609CQDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 78 mΩ typ.
(at VGS = 4.
5 V, ID = 2 A)
• Low drive current • High speed switching • VDSS : 60 V and capable of 2.
5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
1G
Note: Marking is “CQ“.
REJ03G1622-0100 Rev.
1.
00
Mar 03, 2008
2, 4 D
1.
Gate 2.
Drain 3.
Source 4.
Drain S 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
...
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