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RQK0609CQDQS

Part Number	RQK0609CQDQS
Manufacturer	Renesas
Description	N-Channel MOSFET
Published	Apr 28, 2016
Detailed Description	RQK0609CQDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 78 mΩ typ.(at VGS = 4.5 V...
Datasheet	RQK0609CQDQS PDF File

Overview

RQK0609CQDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 78 mΩ typ.
(at VGS = 4.
5 V, ID = 2 A) • Low drive current • High speed switching • VDSS : 60 V and capable of 2.
5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Note: Marking is “CQ“.
REJ03G1622-0100 Rev.
1.
00 Mar 03, 2008 2, 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
...

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RQK0609CQDQS N-Channel MOSFET - Renesas

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