Part Number
|
MTBA5C10H8 |
Manufacturer
|
CYStech |
Description
|
N & P-Channel Enhancement Mode Power MOSFET |
Published
|
Apr 28, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 1/13
N- AND...
|
Datasheet
|
MTBA5C10H8
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C744H8 Issued Date : 2015.
03.
27 Revised Date : 2015.
03.
30 Page No.
: 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8 BVDSS ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.
5V(-4.
5V)
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
N-CH 100V 3.
0A
8.
6A 120mΩ
125mΩ
P-CH -100V -2.
7A
-7.
8A 170mΩ
180mΩ
Equivalent Circuit
MTBA5C10H8
Outline
Pin 1
DFN5×6
G:Gate S:Source D:Drain
Ordering Information
Device MTBA5C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
E...
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