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MTBA5C10V8

CYStech
Part Number MTBA5C10V8
Manufacturer CYStech
Description N & P-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 N- AND P-Channel ...
Datasheet PDF File MTBA5C10V8 PDF File

MTBA5C10V8
MTBA5C10V8

Overview
CYStech Electronics Corp.
Spec.
No.
: C744V8 Issued Date : 2014.
11.
03 Revised Date : Page No.
: 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS N-CH 100V ID@VGS=10V(-10V) 2.
3A RDSON@VGS=10V(-10V) typ.
126.
5mΩ RDSON@VGS=4.
5V(-4.
5V) typ.
130mΩ P-CH -100V -1.
7A 216mΩ 227mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTBA5C10V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C744V8 Issued Date : 2014.
11.
03 Revised Date : Page No.
: 2/13 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Breakdown Voltage BVDSS 100 -100 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) TA=70 °C, VGS=10V (-10V) IDSM 2.
3 1.
8 -1.
7 -1.
4 Continuous Drain Current TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) ID 3.
4 2.
4 -2.
6 -1.
8 Pulsed Drain Current * 3 IDM 10 -10 Total Power Dissipation Single device operation Single device value at dual operation TC=25°C TC=100°C PDSM PD * 1 1.
5 *2 1.
24 *2 3.
75 1.
88 Operating Junction and Storage Temperature Range Tj; Tstg -55~+175 Unit V A W °C Thermal Data Parameter Max.
Thermal Resistance, Junction-to-ambient, single device operation Max.
Thermal Resistance, Junction-to-ambient, single device value at dual operation Max.
Thermal Resistance, Junction-to-case Symbol Rth,j-a Rth,j-c Value 84 *2 101 *2 40 Unit °C/W Note : 1.
The power dissipation PD is...


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