Part Number
|
RJK0636JPD |
Manufacturer
|
Renesas |
Description
|
Silicon N-Channel MOS FET |
Published
|
Apr 28, 2016 |
Detailed Description
|
RJK0636JPD
60 V - 25 A - N Channel Power MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200 Rev.2...
|
Datasheet
|
RJK0636JPD
|
Overview
RJK0636JPD
60 V - 25 A - N Channel Power MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200 Rev.
2.
00
Aug 29, 2012
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ.
Capable of 4.
5 V gate drive Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S))
4
2, 4 D
123
1G
1.
Gate 2.
Drain 3.
Source 4.
Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
...
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