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RJK0636JPD

Part Number	RJK0636JPD
Manufacturer	Renesas
Description	Silicon N-Channel MOS FET
Published	Apr 28, 2016
Detailed Description	RJK0636JPD 60 V - 25 A - N Channel Power MOS FET High Speed Power Switching Preliminary Datasheet R07DS0365EJ0200 Rev.2...
Datasheet	RJK0636JPD PDF File

Overview

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00 Aug 29, 2012 Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 18 m typ.
 Capable of 4.
5 V gate drive  Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Tch = 25C, Rg  50  3.
Tc = 25C 4.
AEC-Q101 compliant Symbol VDSS VGSS ID ID(pulse)N...

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RJK0636JPD Silicon N-Channel MOS FET - Renesas

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