V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VF20120C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS
Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please se...