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V20120C-E3

Vishay
Part Number V20120C-E3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 29, 2016
Detailed Description V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...
Datasheet PDF File V20120C-E3 PDF File

V20120C-E3
V20120C-E3

Overview
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TO-263AB K TO-262AA K 2 1 VB20120C PIN 1 K PIN 2 HEATSINK VI20120C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package 2 x 10 A 120 V 120 A 0.
64 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variation Common cathode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage ra...


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