H5N5005PL Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS(on) = 0.
070 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V) • High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.
33 Ω) • Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) • Avalanche ratings • Built-in fast recovery diode: trr = 220 ns typ Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D REJ03G0419-0400 Rev.
4.
00 May 13, 2009 1 2 3 G Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain p...

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